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PD- 96152A
IRF7754GPBF
HEXFET(R) Power MOSFET
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Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free
VDSS
-12V
RDS(on) max
25m@VGS = -4.5V 34m@VGS = -2.5V 49m@VGS = -1.8V
ID
-5.4A -4.6A -3.9A
Description
HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely
' ! " # A2A9 !A2AT "A2AT #A2AB & % $ 'A2A9! &A2AT! %A2AT! $A2AB!
efficient and reliable device for management.
battery and load
TSSOP-8
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-12 -5.5 -4.4 -22 1 0.64 0.01 8 -55 to +150
Units
V A W W W/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
125
Units
C/W
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05/14/09
IRF7754GPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
RDS(on)
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. -12 --- --- -0.4 16 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.008 --- --- --- --- --- --- --- --- --- 22 3.9 4.8 9.8 18 267 191 1984 618 385
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 25 VGS = -4.5V, ID = -5.4A m VGS = -2.5V, ID = -4.6A 34 49 VGS = -1.8V, ID = -3.9A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -5.4A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -5.4A --- nC VDS = -6V --- VGS = -4.5V 14.7 VDD = -6V, VGS = -4.5V ns 27 ID = -1.0A 401 RD = 6 287 RG = 6 --- VGS = 0V --- pF VDS = -6V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- 39 27 -1.0 A -22 -1.2 59 41 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.0A, VGS = 0V TJ = 25C, IF = -1.0A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width 400s; duty cycle 2%.
2
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IRF7754GPBF
100
100
VGS TOP -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V
VGS -7.0V -5.0V -4.5V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
0.1
-1.0V
1
-1.0V
20s PULSE WIDTH Tj = 25C
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 150C
0.1 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
100
2.0
ID = -5.5A
-I D , Drain-to-Source Current (A)
10
TJ = 150 C
1.5
1.0
TJ = 25 C
1
0.5
0.1 1.0
V DS= -10V 20s PULSE WIDTH 1.2 1.4 1.6 1.8 2.0
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7754GPBF
3200 2800
6
-VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
2400 2000 1600 1200 800 400 0 1
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Coss = Cds + Cgd
ID = -5.4A
V DS=-9.6V V DS=-6V
5
Ciss
4
3
Coss Crss
2
1
10
100
0
0
5
10
15
20
25
30
-VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10
TJ = 150 C TJ = 25 C
-ID , Drain Current (A) I
10
1ms
1
10ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0
-VSD ,Source-to-Drain Voltage (V)
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7754GPBF
6.0
VDS
5.0
RD
VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
-ID , Drain Current (A)
D.U.T.
+
4.0
3.0
2.0
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
1.0
VGS
0.0
25
50
TC , Case Temperature ( C)
75
100
125
150
10%
Fig 9. Maximum Drain Current Vs. Case Temperature
90% VDS
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100
D = 0.50 0.20
10
0.10 0.05 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.1 1 10 100 1000
1
0.1 0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
V DD
5
IRF7754GPBF
( RDS ( on ) , Drain-to-Source On Resistance )
( RDS(on) Drain-to -Source On Resistance) ,
0.070
0.1
0.060
0.08 VGS = -1.8V
0.050
0.06
0.040
I D = -5.5A
0.030
0.04
VGS = -2.5V
0.020
0.02 VGS = -4.5V 0 0.0 5.0 10.0 15.0 20.0 25.0 -ID , Drain Current ( A )
0.010 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
QGS
QGD
VGS
-3mA
VG
IG
ID
Current Sampling Resistors
Charge
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
10 V
D.U.T.
-
VDS
IRF7754GPBF
1.0
300
0.8
-VGS(th) ( V )
200
0.6
Power (W)
100 0
ID = -250A
0.4
0.2 -75 -50 -25 0 25 50 75 100 125 150
0.0001
0.0010 0.0100
0.1000 1.0000 10.0000 100.0000
TJ , Temperature ( C )
Time (sec)
Fig 15. Typical Vgs(th) Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF7754GPBF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7754GPBF
TSSOP8 Part Marking Information
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TSSOP-8 Tape and Reel Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2009
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